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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1147 DESCRIPTION *With TO-3 package *High power dissipations *Complement to type 2SC2707 APPLICATIONS *For power switching amplifier and general purpose applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base CONDITIONS VALUE -180 -180 -6 -15 -5 150 150 -65~150 UNIT V V V A A W Open collector PC Tj Tstg Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SA1147 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 -180 V V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0 -180 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-10A; IB=-1A -3.0 V ICBO Collector cut-off current VCB=-180V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-6V; IC=0 -0.1 mA hFE DC current gain IC=-5A ; VCE=-4V 30 fT Transition frequency IC=-0.5A ; VCE=-12V 60 MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1147 Fig.2 outline dimensions (unindicated tolerance:0.1mm) 3 |
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